An X-band GaN combined solid-state power amplifier
نویسندگان
چکیده
منابع مشابه
Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
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ژورنال
عنوان ژورنال: Journal of Semiconductors
سال: 2009
ISSN: 1674-4926
DOI: 10.1088/1674-4926/30/9/095001